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Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
GaAs Anisotropic Chemical Etching TENSOSIM
2010/12/7
The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution...
The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, ga...
Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
Material dispersion GaAs far-infrared group index
2010/12/9
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is d...
DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
NERFET MBE NDR a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
2010/12/10
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resis...
Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
MOCVD-Grown High-Quality CdTe Layers GaAs Substrates
2010/12/14
CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The...
This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operating at the infrared range. An approximated expression for the variation of the refractive index in the ...
A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
GaAs Mesfet Si NMOS ESD Behaviour
2010/12/21
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET...
The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions
GaAs Epitaxial Layers Ga-As-Bi Solutions
2010/12/21
X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the...