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Active and Passive Realization of Fractance Device of Order 1/2
Fractance Device of Order 1/2 impedance function the previous techniques
2010/12/6
Active and passive realization of Fractance device of order 1/2 is presented. The crucial point in the realization of fractance device is finding the rational approximation of its impedance function. ...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
2010/12/10
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...
A ZnTe Thin Film Memory Device
Thin ZnTe layers memory switching characteristics Poole–Frenkel emission
2011/1/21
Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explai...