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Study reveals new ways for exotic quasiparticles to “relax”（图）
外来准粒子 钙钛矿 电子学 光子学 计算机芯片 量子比特
2023/6/7
New findings from a team of researchers at MIT and elsewhere could help pave the way for new kinds of devices that efficiently bridge the gap between matter and light. These might include computer chi...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
Imaging Tissue Conductivity via Contactless Measurements: A Feasibility Study
Imaging Tissue Conductivity Contactless Measurements Feasibility Study
2009/7/27
The feasibility of a new imaging system is investigated. This system will be used to image electrical conductivity distribution of biological tissues via contactless measurements. This will be achieve...
Return Loss Analysis and Experimental Study of Semiconductor Optical Amplifiers
SOA Return loss Residual reflectivity External cavity.
2010/7/16
Return loss of single semiconductor optical amplifier (SOA) module has been analysed in the
paper. The external cavity formed by residual reflectivity of coupling pigtail fibers is the obstacle to in...
A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors
Phonon density of states amorphous semiconductors far-infrared range
2010/12/10
Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is e...
A Detailed Analytical Study Of Non-Linear Semiconductor Device Modelling
Gunn SCR p-n junction Semiconductor Device
2010/12/14
This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n ...