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Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets
SnO2 F Thin Films R.F Various Targets
2010/12/16
Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2...
High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
d.c. reactive ion an argon atmosphere oxygen partial pressures
2010/12/21
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the t...
Reproducibility of Properties of SnOx Thin Films Prepared by Reactive Sputtering
SnOx Thin Films Reactive Sputtering substrate temperature
2010/12/23
The preparation of tin dioxide films by low energy reactive sputtering of tin and tin-antimony (1-10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the ran...
Properties of Nickel Films Prepared by R.F. Sputtering and Interdiffusion Analysis of Ta2N–Ni Films
Nickel Films R.F. Sputtering Ta2N–Ni Films
2011/1/21
Ni film deposition by r.f. sputtering and etching conditions have been investigated. The contact resistance and adhesion of this Ni layer deposited directly onto Ta2N films have also been studied in a...