搜索结果: 1-10 共查到“电子科学与技术 response”相关记录10条 . 查询时间(0.161 秒)
Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
上海交通大学模拟电子技术课件 frenquency response。
Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Carrier mobility Delta doping Hot carriers Quantum wells
2010/2/2
Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communica...
期刊信息
篇名
Phosphorescent pH Sensors and Switches With Substitutionally Tunable Response Range Based on Photo-induced Electron Transfer.
语种
英文
撰写或编译
撰写
作者
Yu Wang,Zhao Zhang,Li Xuan Mu,Hong Sheng Mao,Yu ...
A new reverse photoinduced electron transfer phosphoroionophore with response to heavy metal ions.
2007/7/28
期刊信息
篇名
A new reverse photoinduced electron transfer phosphoroionophore with response to heavy metal ions.
语种
英文
撰写或编译
作者
Yu Wang Zhao Zhang,Yu Feng Wang,Li Ping Qin,Wei Jun Jin
第一作者单位
刊物名称
Anal. Lett...
会议信息
篇名
Phosphorescent pH sensors and switches with substitutionally tunable response range based on photoinduced electron transfer.
语种
英文
撰写或编译
作者
Yu Wang,Zhao Zhang,Li Xuan Mu,Hong Sheng Mao,Yu Feng...
Optical Response Study of the Al/a-Sic:H Schottky Diode for Different Substrate Temperatures of the R.F. Sputtered a-Sic:H Thin Film
Schottky diode Optical sensor Heterojunction Diffusion length
2010/12/7
In the present work, Schottky diodes of Al/a-SiC:H included in the structure Al/a-SiC:H/c-Si(n)/Al were fabricated and their optical response was studied in the wavelength region from 350 nm up to 100...
Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Thermal Effect Frequency Response Heterojunction Bipolar Power Transistor
2010/12/8
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high cu...
Response to Comments on Paper on Grain Boundary Scattering Model for Metals
Grain Boundary Scattering Model Metals
2010/12/28
The electrical conductivity of a polycrystalline metal film has been studied for a model in which the background scattering and grain boundary scattering are independent. The external surface electron...
The Influence of Filter Parameters on the Response of Ceramic Filters Operating in the Thickness-Twist Mode
Filter Parameters Ceramic Filters the Thickness-Twist Mode
2010/12/28
Starting with common equivalent circuits, computer programs have been designed to enable the calculation of filter responses from the parameters of the ceramic material and the dimensions of the elect...