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A hybrid silicon traveling-wave electroabsorption modulator has been demonstrated. 43 GHz bandwidth and over 10 dB static extinction ratio are achieved for a 100 μm long device.
We demonstrated the first laser and photodetector integrated triplexer on silicon with a compact size of 1mm*3.5mm. The 3dB bandwidth for the 1310nm laser and 1490/1550nm photodetector were measured t...
A brief review of recent progress in photonic integrated circuits (PIC) and connection to the electronic IC roadmap is presented. High-quality wafer bonding, electrically pumped lasers and high speed ...
Current discrete optical solutions for high data-rate link applications, even with potentially high manufacturing volumes, are too costly. Highly integrated, multifunction modules are a key part of th...
We demonstrate the first hybrid silicon sampled grating DBR laser integrated with an electroabsorption modulator. Laser operation >45 o C is achieved with output power >0.5mW. Modulator bandwidth is >...

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