搜索结果: 1-7 共查到“光学工程 Semiconductor Lasers”相关记录7条 . 查询时间(0.049 秒)
Wavelength-tunable QAM Synthesis by Direct Modulation of Injection-locked Fabry-Perot Semiconductor Lasers
Wavelength-tunable QAM Synthesis Direct Modulation Injection-locked Fabry-Perot Semiconductor Lasers
2014/11/6
A new scheme for direct and tunable (30nm shown here) QAM synthesis from binary RF data streams is demonstrated with up to 48Gbit/s QPSK, including propagation over 75km SMF-28. Preliminary 16QAM (60G...
Nonlinear Dynamics in Directly Modulated Semiconductor Lasers with Optical Loop Mirror Feedback
Nonlinear Dynamics Nonlinear Loop Mirror Pulse Multiplication Optical Chaotic And Pulse Mode Locking
2013/1/30
The investigation of the nonlinear dynamics of a semiconductor laser based on nonlinear optical loop mirror (NOLM) feedback using Ge doped optical fiber was carried out experimentally. Animations of c...
Amplitude Regeneration of Phase Encoded Signals Using Injection Locking in Semiconductor Lasers
Lasers and laser optics Lasers injection-locked
2015/5/25
A phase preserving limiter based on injection locking in semiconductor lasers is experimentally investigated for 10Gb/s phase encoded signals. The proposed scheme exhibits significant amplitude noise ...
Preface to Topical Papers on Direct Applications of High-Power Semiconductor Lasers
Direct Applications High-Power Semiconductor Lasers
2009/6/10
Preface to Topical Papers on Direct Applications of High-Power Semiconductor Lasers.
High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
high power semiconductor laser
2011/5/4
A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diod...
Application of spatially resolved thermoreflectance for the study of facet heating in high power semiconductor lasers
thermoreflectance
2011/5/3
We have developed a new technique for monitoring the facet heating in semiconductor lasers and for correlating these measurements with the performance and reliability of the device. The method is base...
Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band
InGaAs quantum-well lasers, molecular beam epitaxy, optical pyrometry
2011/4/27
The paper deals with selected problems of molecular beam epitaxy (MBE) technology of fabrication of 980-nm strained InGaAs quantum-well (QW) lasers. Special attention has been paid to the growth of ac...