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Influence of Photoexcitation Depth on Luminescence Spectra of Bulk GaAs Single Crystals and Defect Structure Characterization
Photoexcitation Luminescence Spectra Bulk GaAs Single Crystals Defect Structure Characterization
2011/9/9
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close bu...
Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization
Photoexcitation Luminescence Spectra depth Bulk GaAs Single Crystals Defect Structure Characterization
2011/9/9
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close bu...
压痕诱导单晶GaAs非晶相变
压痕 非晶转变
2008/11/6
利用高分辨电子显微镜观察了（100）GaAs单晶Vickers压痕诱发的形变行为. 结果表明，这种材料在Vickers硬度计载荷的作用下产生许多孪晶和堆垛层错，导致发生晶格扭曲， 最终诱发晶体的非晶转变.
电子束诱导非晶GaAs晶化的形核与长大
非晶GaAs 电子束辐照 结晶
2008/9/16
利用高分辨电子显微镜对电子束辐照诱发非晶GaAs晶化过程现象进行了原位观察. 结果表明, 具有几个原子大小的原子簇在辐照初期产生, 并作为晶化的核心在随后的辐照过程中不断长大; 大部分结晶晶粒保持相同的晶体取向, 其余少量不同取向的晶粒也与前者保持孪晶关系. 电子束辐照诱发非晶GaAs晶化的速率与电子束流密度有关; 电子速辐照非晶GaAs结晶不是电子束诱发材料湿度升高的结果, 而与电子能量有关. ...
FeSe film was prepared on GaAs 001 substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tet...
MOCVD growth, structure and magnetic properties of Fe films grown on GaAs (001) substrates
A. Iron films D. Magnetic properties D. Interface effect D. MOCVD
2011/12/8
Thin iron films have been grown on (001) GaAs substrates by low pressure metal organic chemical vapor deposition (LP-MOCVD) at different temperatures with the pressure of 150 Torr. X-ray diffraction (...
空间生长LiIO3和GaAs晶体的比热容
比热容 空间材料 碘酸锂 砷化镓
2007/10/26
文章摘要：
用差式扫描量热计(DSC)测定了空间及地面生长的碘酸锂在160-620K和砷化镓晶体在320-620K温度范围内的比热容. 结果表明, 空间生长碘酸锂和砷化镓晶体的比热容在测量温度范围内与地面生长晶体的比热容无明显差别.