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Manipulation of the Lande g-factor in InAs quantum dots through application of anisotropic gate potentials
Lande g-factor anisotropic gate potentials
2010/11/19
We study the variation in the Lande g-factor of electron spins induced by an anisotropic gate
potential in InAs quantum dots for potential use as non-charge based logic devices. In this paper,we pres...
Scattering and bound states by localized potentials
Scattering bound states localized potentials
2010/11/5
A simple formalism for exploring quantum scattering and possible bound states in an arbitrary symmetric and localized potential in a unified way is presented. The symmetric square barrier and well pot...