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Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Bond-specific reaction kinetics oxidation of (111) Si Effect of n-type doping
2010/11/24
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not...
Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate
graphene Raman spectroscopy scanning tunneling microscopy (STM)
2010/11/22
Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The obs...
Doping Effects of Ga And Te On The Kinetic Coefficients of Rhombohedral And Cubic Phases Of Ge1-x Gax Te Solid Solution Alloys
Doping Effects Ga Te Ge1-x Gax Te Solid Solution Alloys
2010/4/16
this study Ga and Te doping effects on the kinetic parameters (thermo e.m.f., electrical conductivity, heat conductivity, Hall and Nernst-Ettingshausen coefficients) of the rhombohedral and cubic phas...