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Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs
GaAs near bandedge absorption reverse-contrast
2010/4/13
Near bandedge optical absorption processes in semi-insulating (SI) GaAs and Te-doped n-type GaAs crystals were investigated in the temperature range 10--300 K. We observed absorption peaks whose maxim...
Feasibility of the GaInP/InGaAs/GaAs System for Modulation Doped Field-Effect Transistors
GaInP/InGaAs/GaAs System Modulation Doped Field-Effect Transistors
2010/4/16
Si-doped single Ga0.51In0.49P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effe...
Electron Transport in GaAs Quantum Wells: Effect of Interface Roughness Scatterin
interface roughness electron transport
2010/4/16
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...