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Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Group-III assisted catalyst-free growth InGaAs nanowires quantum dots
2010/11/25
Growth of GaAs and InxGa1xAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the ind...