搜索结果: 1-13 共查到“物理学 E- and F-layers”相关记录13条 . 查询时间(0.097 秒)
Quantum movement of electrons between atomic layers shows potential application of van der Waals materials for electronics and photonics（图）
Quantum movement electrons between atomic layers potential application van der Waals materials electronics photonics
2017/3/30
Common sense might dictate that for an object to move from one point to another, it must go through all the points on the path.“Imagine someone driving from Kansas City to Topeka on I-70 — it’s safe t...
Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system
ual emissive layer luminous efficiency blue OLED
2014/4/16
We fabricated highly efficient blue organic light-emitting diodes (OLEDs) by designing differing emitting layer structures with fluorescent host and dopant materials of 4,4-bis (2,2-diphenylyinyl)-1,1...
Thermochromism of Silver Oxide for Optical Switching Layers in Volumetric Optical Disks
phase change volumetric optical disk dual layer optical disk optical switching layer thermo-chromatic material thermochromism silver oxide
2011/11/28
For reading and writing on a lower targeted recording layer ofvolumetric optical disks, transmitted laser power is decreased by absorption and reflection ofthe upper layers. Thus, a layer ofthermo-chr...
Broadband enhanced transmission through the stacked metallic multi-layers perforated with coaxial annular apertures
Broadband enhanced transmission stacked metallic multi-layers coaxial annular apertures
2011/8/11
Abstract: This paper theoretically and experimentally presents a first report on broadband enhanced transmission through stacked metallic multi-layers perforated with coaxial annular apertures (CAAs)....
Layers of Cold Dipolar Molecules in the Harmonic Approximation
Harmonic Approximation Dipolar Molecules
2011/7/21
We consider the N-body problem in a layered geometry containing cold polar molecules with dipole moments that are polarized perpendicular to the layers. A harmonic approximation is used to simplify th...
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Molecular dynamics simulation amorphous Si layers the recrystallization velocity
2011/8/3
Abstract: The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with t...
Surface Layers in the Gravity/Hydrodynamics Correspondence
Surface Layers the Gravity/Hydrodynamics Correspondence
2010/12/24
I review the AdS/hydrodynamics correspondence, which provides a 1-1 map between large wavelength features of AdS black branes and conformal fluid flows. In this thesis I consider boundaries between n...
Determining the Critical Temperature and Number of Frozen Layers in a Two-Dimensional Bed of Vibrating Hard Spheres Using a Global Equation of State
Critical Temperature Number of Frozen Layers Two-Dimensional Bed of Vibrating Hard Spheres
2010/11/25
Using a global equation of state, empirically derived by Luding, we ac-curately model the density profile of a two-dimensional hard sphere system with diameter D and mass m under gravity with a given ...
Shape resonance for the anisotropic superconducting gaps near a Lifshitz transition: the effect of electron hopping between layers
Shape resonance anisotropic superconducting gaps effect of electron
2010/11/24
The multigap superconductivity modulated by quantum confinement effects in a superlattice of
quantum wells is presented. Our theoretical BCS approach captures the low-energy physics of a
shape reson...
Optical Response of Metal-Dielectric Composite Containing
Interfacial Layers
optical properties temperature dependence electron-electron
interactions
2007/8/15
2001Vol.36No.2pp.251-256DOI:
Optical Response of Metal-Dielectric Composite Containing
Interfacial Layers
HUANG Ji-Ping,2 GAO Lei2 and LI Zhen-Ya1,2
1 CCAST (World Labor...
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
silicon oxide layer quantum dot luminescence
2007/8/15
2001Vol.35No.3pp.371-380DOI:
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
WANG Si-Hui,1,2 QIN Guo-Yi,1 REN Shang-Fen3 and
QIN Guo-Gang4,5
...
Structural characteristics of low-temperature plasma-nitrided layers on AISI 304 stainless steel,
2007/7/28
期刊信息
篇名
Structural characteristics of low-temperature plasma-nitrided layers on AISI 304 stainless steel,
语种
英文
撰写或编译
撰写
作者
Z. W. Yu,X.L. Xu,L. Wang
第一作者单位
刊物名称
Surf. Coat. Technol
页面
153 (2002) 125
出...
Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...