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MIT engineers “grow” atomically thin transistors on top of computer chips(图)
计算机芯片 原子薄晶体管 低温生长 集成电路
2023/6/6
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter3 Bipolar Junction Transistors
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors。
Physicists Decipher Electronic Properties of Materials in Work That May Change Transistors
Physicists Electronic Properties Materials Change Transistors
2016/12/13
UT Dallas physicists have published new findings examining the electrical properties of materials that could be harnessed for next-generation transistors and electronics.Dr. Fan Zhang, assistant profe...
Berkeley Lab Scientists Grow Atomically Thin Transistors and Circuits
Berkeley Lab Scientists Atomically Thin Transistors Circuits
2016/7/15
In an advance that helps pave the way for next-generation electronics and computing technologies—and possibly paper-thin gadgets —scientists with the U.S. Department of Energy’s Lawrence Berkeley Nati...
Penn Engineers Develop First Transistors Made Entirely of Nanocrystal ‘Inks’
Penn Engineers Transistors Nanocrystal Inks
2016/4/13
The transistor is the most fundamental building block of electronics, used to build circuits capable of amplifying electrical signals or switching them between the 0s and 1s at the heart of digital co...
Incoherent dynamics of vibrating single-molecule transistors
Nanometer quantum island single electron transistor model dynamics
2014/12/20
We study the tunneling conductance of nanoscale quantum “shuttles” in connection with a recent experiment [H. Park et al., Nature 407, 57 (2000)] in which a vibrating C60 molecule was apparently funct...
Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
InP HBT LNA Modelling Transistor Small-signal modelling
2014/12/8
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
ANN ARBOR—An odd, iridescent material that's puzzled physicists for decades turns out to be an exotic state of matter that could open a new path to quantum computers and other next-generation electron...
Nanowire bridging transistors open way to next-generation electronics
Nanowire bridging transistors open way next-generation electronics
2014/6/12
A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electroni...
Temperature dependence of frequency response characteristics in organic field-effect transistors
MIS capacitors frequency response organic compounds organic field effect transistors 8432Tt 8530Tv
2016/12/2
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics
Organic Nanoparticle Dielectrics Thin-film transistors
2011/11/24
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linke...
Organic thin-film transistors with reduced photosensitivity
Organic Photosensitivity Nanoparticle Dielectrics Thin-film transistors
2011/11/24
Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a p...
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
Hysteresis of Electronic Transport in Graphene Transistors
graphene transistor conductance hysteresis charge transfer capacitive gating water dipole
2010/11/17
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The
gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is sh...
Imaging Dissipative Transport in Carbon Nanotube Network Transistors
Imaging Dissipative Transport Carbon Nanotube Network Transistors
2010/11/24
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the forma-tion of distinct hot spots during operation. However, the average CNN temperature at breakdown is significan...