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Achieving high reliability across environmental variations and over aging in physical unclonable functions (PUFs) remains a challenge for PUF designers. The conventional method to improve PUF reliab...
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spati...
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of...
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...

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