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Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
Gallium Arsenide Application Symposium Association（GAAS)
Gallium Arsenide Application Symposium Association GAAS
2012/4/10
Gallium Arsenide Application Symposium Associationhas no commercial or, in any case, speculative or profit-making aim, and cannot carry out activities other than those indicated at point 1 of this art...
Gold in Gallium Arsenide Die-Attach Technology.
Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
Hydrogen Gallium arsenide RF-magnetron sputtering
2010/9/29
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the ...
A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide
Far-infrared spectrum a-GaAs transversal optical mode dipole moment matrix element
2010/12/9
Contributions to the far-infrared spectrum corresponding to both dynamical and structural disorders in a-GaAs are examined when frequency coincides with the transversal optical mode. Under these circu...
A Short Theoretical Note on Optical Absorption of Amorphous Gallium Arsenide in the Infrared Range
Optical absorption coefficient amorphous GaAs far infrared range
2010/12/10
An approach to determine the optical absorption coefficient of amorphous GaAs in the far infrared range is developed. Results from this approach are compared with experiment and with other theoretical...