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搜索结果: 1-6 共查到Gallium Nitride相关记录6条 . 查询时间(0.093 秒)
This work compares the behavior of PC12 cells on planar and patterned III-nitride materials with nanostructured topographies. Three different materials’ compositions containing N-polar and Ga-polar ar...
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
A correlation of surface potential maps and photocurrent distribution images in metal–semiconductor–metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. ...
High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to mill...
A metastable cubic phase GaN blue light emitting device has been fabricated. It has demonstrated the feasibility of growing device quality metastable cubic GaN films on GaAs substrates. A very simpl...

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