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Cornell engineers and materials scientists have added a state-of-the-art tool to their suite of laboratory equipment that has helped make the university a world leader in the study of gallium oxide, a...
This work compares the behavior of PC12 cells on planar and patterned III-nitride materials with nanostructured topographies. Three different materials’ compositions containing N-polar and Ga-polar ar...
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
The huge energy demand of our society is causing fossil fuel resources to diminish rapidly. Therefore, it is critical to search for alternative energy resources. Biomass is currently both abundant and...
Aim: The present study evaluated the magnitude of temperature changes in the tooth during cavitation produced by an Er,Cr:YSGG laser. Methods: The root canal of a single extracted maxillary canine was...
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP) nanowire (NW) arrays on silicon (Si), using chemical beam epitaxy (CBE). The vertical alignment of GaP ...
Gallium Arsenide Application Symposium Associationhas no commercial or, in any case, speculative or profit-making aim, and cannot carry out activities other than those indicated at point 1 of this art...
Experiments with a liquid metal alloy, galinstan, are reported and show clear evidence of Alfv閚 wave propagation as well as resonance of Alfv閚 modes. Galinstan is liquid at room temperature, and altho...
Hydrotalcites based upon gallium as a replacement for aluminium in hydrotalcite over a Mg/Al ratio of 2:1 to 4:1 were synthesised. The d(003) spacing varied from 7.83 ?for the 2:1 hydrotalcite to 8.15...
Gold in Gallium Arsenide Die-Attach Technology.
A correlation of surface potential maps and photocurrent distribution images in metal–semiconductor–metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. ...
Objective: To test the shear bond strength, surface characteristics, and fracture mode of brackets that are bonded to enamel etched with an erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG...

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