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40-Gbps Transmission Using Direct Modulation of 1.3-μm AlGaInAs MQW Distributed-Reflector Lasers up to 70oC
Semiconductor lasers
2015/5/25
40-Gbps transmission over 5-km single-mode fiber using a directly modulated 1.3-μm AlGaInAs MQW distributed-reflector laser was demonstrated. Error-free operations up to 70oC have been achieved.
利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808 nm LD泵浦的Nd:YVO4键合晶体进行被动调Q，获得了波长为1.06 mm的激光脉冲，测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化。当泵浦功率为10.57 W时，激光平均输出功率为3.45 W，斜效率为39 %，重复频率达到最大值101 kHz。当泵浦功率为8.07 W时，脉冲宽度达到最小值1.76 ns。利用速率方...
AlGaInAs-InP C-Band Tunable DS-DBR Laser for Semi-Cooled Operation at 55°C
AlGaInAs-InP C-Band Tunable DS-DBR Laser Semi-Cooled Operation
2015/8/3
Digital supermode (DS) DBR lasers utilising an AlGaInAs based active region are demonstrated for full C-band operation (100 by 50GHz spaced channels) at 55°C for semi-cooled applications.
High Speed AlGaInAs Electroabsorption Modulated Laser and its Optically Equalized Operation at 86 Gb/s
High Speed AlGaInAs Electroabsorption Modulated Optically Equalized
2015/8/3
We demonstrate a novel compact AlGaInAs electroabsorption modulated laser at 86 Gb/s including bit-error rate measurements using an optical equalizer.