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The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significan...
This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data wi...
December 12, 2006,MIT engineers have demonstrated a technology that could introduce an important new phase of the microelectronics revolution that has already brought us iPods, laptops and much more.
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter e...
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high cu...
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...
The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameter...
III-N is the most promising material for high-temperature, high-power electronic devices. There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many applications, metal...
Mobile communication is one of the fastest growing markets and demands a significant part of the integrated circuitsales. In the past transceivers in the GHz range have required silicon bipolar transi...
The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the ba...
In this paper the possible circuit applications of thin film transistors, made by shadow masks, are discussed. Special attention is paid to the basic parameters determining the circuit properties.
With the rapid development in the semiconductor industry, solid state devices are now being produced which are capable of generating high power and operating at elevated temperatures. Package design...

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