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Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
4H-SiC Double Drift Region IMPATT Device a Photo-Sensitive High-Power Source 0.7 Terahertz Frequency Regime
2010/12/6
The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experi...