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SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the...
This study investigates the reliability physics of the reverse bias luminescence (RBL) of InGaN/GaN light emitting diodes. Optical and electrical characterization techniques including surface temper...
We show hardware-in-the-loop experiments for 1.25 Gbit/s Transmission over SI-POF over up to 75m using LEDs with predistorted PAM4 signalling and fractionally-spaced equalisation.
Recent progress in fabrication of semiconductor light emitting diodes (LEDs) allows these devices to be used for excitation of fluorescence of aromatic amino acids and other biofluorophores. In our wo...
We use coupled optical and electronic simulations to investigate design trade-offs in electrically pumped photonic-crystal-based light-emitting diodes. A finite-difference frequency-domain elect...

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