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High Performance Ge/Si Avalanche Photodiodes Development in Intel
Photodetectors Optical communications
2015/5/26
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically int...
The development of the 1.27 μm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)
Avalanche photodiodes Optical communications
2015/6/4
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications
Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes
2015/7/20
We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported ( I dM =0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and ...
Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2015/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.