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Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Boundary conditions in the Dirac approach to graphene devices
Boundary conditions graphene devices
2010/11/22
We study a family of local boundary conditions for the Dirac problem corresponding to the continuum limit of graphene, both for nanoribbons and nanodots. We show that, among the members
of such famil...
Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices
Capacitance-voltage profiling techniques characterization of semiconductor materials devices
2010/11/23
This work re-defines the well-known C-V (capacitance-voltage)measurement technique, in the view of a new physics formula,discovered in 2006 [1].
Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices
Spin-Dependent Conductance Nonmagnetic InGaAs Asymmetric Double Barrier Devices
2010/10/21
The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k¢p and envelope function approximations. The spin-dependent transmission prob...
Electrons and Phonons in GaN Semiconductor Quantum Well Devices
Electrons Phonons GaN Semiconductor Quantum Well Devices
2010/4/16
Electrons and polar optical phonons and their interactions are considered in the context of semiconductor quantum well devices, with particular reference to real quantum well laser structures. Distinc...
Current-Voltage Characteristics and Photoresponse of Metal Metal Devices
Photoresponse Metal Metal Devices
2010/4/19
Thin films (35 \AA) of Al2O3 on glass slides have been used for the fabrication of Al/Al2O3/Al, Ag/Al2O3/Al and Cu/Al2O3/Al devices. The room temperature current-voltage characteristics and the depend...