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Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser
Heteroepitaxial Gex Si1-x/Si(111) Pulsed Nd: YAG Laser
2010/4/15
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å ar...