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在室温条件下,以溴乙烷为单体、氢气为载气,用13.56 MHz射频等离子体化学气相淀积方法(RF-PECVD)在硅片衬底上生长了掺溴非晶碳氢薄膜(a-C∶Br∶H)。通过对其进行Raman光谱分析,研究了工作气压对薄膜结构的影响。结果显示:随着气体工作压力从20 Pa下降至5 Pa, 样品D峰强度增强,ID/IG值逐步由1.18增加至1.36,G峰的位置向高频轻微移动;与此同时,薄膜生长方式逐步转...
Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films
PECVD Nitride films C-V G-V I-V P M A hysteresis and memory window
2010/4/9
A memory capacitor formed from Al/Si3N4/Si was prepared by means of trapping and de trapping mechanism of the dielectric films. Charge trapping and interface state characteristics of silicon nitride (...
Adherent Diamond-Like Carbon Coatings on Metals Via PECVD and IBAD
Diamond-like carbon Plasma enhanced chemical vapor deposition Ion beam-assisted deposition
2010/9/29
Adherent and low-stress a-C:H films were deposited on Ti6Al4V and stainless steel substrates using PECVD and IBAD techniques. An amorphous silicon interlayer was applied to improve the adhesion of the...