搜索结果: 1-6 共查到“光学工程 Electrical properties”相关记录6条 . 查询时间(0.031 秒)
Effect of Sn dopants on the optical and electrical properties of ZnO films
ZnO film optical band gap optical constant figure of merit
2011/5/6
The undoped and tin (Sn) doped ZnO films were deposited by a spray pyrolysis method onto
the glass substrates. 0.2 M solution of zinc acetate in a mixture of ethanol and deionised water, in
a volume...
期刊信息
篇名
Study on preparation and electrical properties of Ba1.03Ce0.8Eu0.2O3-( solid electrolyte
语种
英文
撰写或编译
作者
Qiu Ligan,Ma Guilin(,Wen Dijiang
第一作者单位
刊物名称
J. Rare Earths
页面
22. 678-682, 2004
出版日期
20...
期刊信息
篇名
Annealing effect on electrical properties of high-k MgZnO film on silicon
语种
英文
撰写或编译
作者
Liang J,Wu HZ(吴惠桢),Chen NB,Xu TN
第一作者单位
刊物名称
Semiconductor Science and Technology
页面
20, L1-L5 2005 (校样...
Investigations of electrical properties of Eu- and Pd-doped titanium dioxide thin films on silicon
oxide semiconductor
2011/5/4
In this work, investigations of electrical properties of Eu- and Pd-doped TiO2 thin films have been outlined. Thin films were deposited by low pressure hot target reactive magnetron sputtering from me...
Effect of short time reduction on electrical properties of bismuth-silicate glasses
bismuth-silicate glass electrical conductivity reduction in hydrogen
2011/4/28
We have investigated the effect of short time reduction on the electrical conductivity of the 70SiO2–25Bi2O3–5K2O (mol%) bismuth silicate glasses. During a short time heat treatment in hydrogen (about...
Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon
germanium-doped silicon neutron-irradiated silicon defects
2011/4/27
The effect of annealing at 720–920 K under enhanced pressure (up to 1.1 GPa) in argon ambient on electrical properties of the surface layer of the Czochralski-grown silicon (Cz-Si) subjected to neutro...