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If they’re quick about it, “hot” electrons excited in a plasmonic metal can tunnel their way across a nanoscale gap to a neighboring metal. Rice University scientists said the cool part is what happen...
HOUSTON – (Jan. 30, 2014) – Plasmonic nanoparticles developed at Rice University are becoming known for their ability to turn light into heat, but how to use them to generate electricity is not nearly...
Comment on "Head-on collision of electron acoustic solitary waves in a plasma with nonextensive hot electrons"
Comment Head-on collision of electron acoustic solitary waves nonextensive hot electrons Space Physics
2012/4/20
In a recent paper "Head-on collision of electron acoustic solitary waves in a plasma with nonextensive hot electrons" [Astrophys. Space Sci. 338, 271-278 (2012)] Eslami, Mottaghizadeh and Pakzad deal ...
Physicists in the US say that they have taken an important step forward in the race to build solar cells that are both cheap and highly efficient. They have managed for the first time to tap some of t...
Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Carrier mobility Delta doping Hot carriers Quantum wells
2010/2/2
Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communica...
(2+1)-Dimensional Electron Acoustic Solitary Waves in an Unmagnetized Collisionless Plasma with Vortex-Like Hot Electrons
electron acoustic solitary wave
vortex-like hot electrons reductive perturbation method
2007/8/15
2007Vol.47No.2pp.339-342DOI:
(2+1)-Dimensional Electron Acoustic Solitary Waves in an Unmagnetized Collisionless Plasma with Vortex-Like Hot Electrons
LIN Mai-Mai and DUAN Wen-Sha...
Energy Relaxation Rate of Hot Electrons in N-Type GaN Epilayers using Heat Pulse Techniques
Energy Relaxation Rate N-Type GaN Epilayers Hot Electrons
2010/4/16
We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made u...